? semiconductor components industries, llc, 2012 august, 2012 ? rev. 2 1 publication order number: ngtg15n60s1e/d NGTG15N60S1EG igbt - short-circuit rated this insulated gate bipolar transistor (igbt) features a robust and cost effective non ? punch through (npt) trench construction, and provides superior performance in demanding switching applications. offering both low on state voltage and minimal switching loss, the igbt is well suited for motor drive control and other hard switching applications. features ? low saturation voltage resulting in low conduction loss ? low switching loss in higher frequency applications ? 5 s short circuit capability ? excellent current versus package size performance density ? this is a pb ? free device typical applications ? white goods appliance motor control ? general purpose inverter ? ac and dc motor control absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 120 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 117 47 w short circuit withstand time v ge = 15 v, v ce = 400 v, t j +150 c t sc 5 s operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 220 case 221a style 4 15 a, 600 v v cesat = 1.5 v device package shipping ordering information NGTG15N60S1EG to ? 220 (pb ? free) 50 units / rail http://onsemi.com marking diagram g e c g15n60s1g ayww a = assembly location y = year ww = work week g = pb ? free package g c e c
NGTG15N60S1EG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction to case, for igbt r jc 1.06 c/w thermal resistance junction to ambient r ja 60 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v , i c = 15 a v ge = 15 v , i c = 15 a, t j = 150 c v cesat 1.3 1.55 1.5 1.75 1.7 1.95 v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? 10 ? ? 200 a gate leakage current, collector ? emitter short ? circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na forward transconductance v ce = 20 v, i c = 15 a g fs ? 10.1 ? s dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 1950 ? pf output capacitance c oes ? 70 ? reverse transfer capacitance c res ? 48 ? gate charge total v ce = 480 v, i c = 15 a, v ge = 15 v q g ? 88 ? nc gate to emitter charge q ge ? 16 ? gate to collector charge q gc ? 42 ? switching characteristic , inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 15 a r g = 22 v ge = 0 v / 15 v* t d(on) ? 65 ? ns rise time t r ? 28 ? turn ? off delay time t d(off) ? 170 ? fall time t f ? 140 ? turn ? on switching loss e on ? 0.550 ? mj turn ? off switching loss e off ? 0.350 ? total switching loss e ts ? 0.900 ? turn ? on delay time t j = 150 c v cc = 400 v, i c = 15 a r g = 22 v ge = 0 v / 15 v* t d(on) ? 65 ? ns rise time t r ? 28 ? turn ? off delay time t d(off) ? 180 ? fall time t f ? 260 ? turn ? on switching loss e on ? 0.650 ? mj turn ? off switching loss e off ? 0.600 ? total switching loss e ts ? 1.250 ? *includes diode reverse recovery loss using ngtb15n60s1eg.
NGTG15N60S1EG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) 8 7 6 4 3 2 1 0 0 10 20 30 40 50 60 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 8 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 12 14 10 8 6 4 2 0 0 10 20 30 40 50 60 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature ( c) v ce , collector ? emitter voltage (v) 130 40 10 ? 20 ? 50 0 0.5 1.0 1.5 2.0 2.5 3.0 90 80 60 50 40 20 10 0 10 100 1000 10,000 i c , collector current (a) i c , collector current (a) i c , collector current (a) v ce , collector ? emitter voltage (v) capacitance (pf) 5 v ge = 7 v v ge = 9 v v ge = 11 v v ge = 17 v to 13 v t j = 25 c v ce , collector ? emitter voltage (v) 8 7 6 4 3 2 1 0 0 10 20 30 40 50 60 i c , collector current (a) 5 v ge = 7 v v ge = 9 v v ge = 11 v 7 v ge = 7 v v ge = 9 v v ge = 11 v 150 c ? 40 c t j = 25 c 70 160 i c = 30 a i c = 15 a i c = 10 a i c = 5 a 30 70 100 c ies c oes c res v ge = 17 v to 13 v t j = 150 c v ge = 17 v to 13 v t j = ? 40 c 100
NGTG15N60S1EG http://onsemi.com 4 typical characteristics 20 16 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12 24 28 32 v ce = 400 v v ge = 15 v t j = 150 c r g = 22 eoff eon 160 figure 7. typical gate charge figure 8. switching loss vs. temperature q g , gate charge (nc) t j , junction temperature ( c) 90 70 60 40 30 20 10 0 20 140 120 100 80 60 40 20 0 1 10 100 1000 figure 9. switching time vs. temperature figure 10. switching loss vs. i c t j , junction temperature ( c) i c , collector current (a) 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.6 0.7 28 20 16 8 1 10 100 1000 figure 11. switching time vs. i c figure 12. switching time vs. r g i c , collector current (a) r g , gate resistor ( ) v ge , gate ? to ? emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) switching loss (mj) 50 80 100 v ces = 480 v 160 v ce = 400 v v ge = 15 v i c = 15 a r g = 22 t f t r t d(off) t d(on) 0.5 v ce = 400 v v ge = 15 v i c = 15 a r g = 22 eoff eon 12 24 32 t f t r t d(off) t d(on) 15 10 5 0 v ce = 400 v v ge = 15 v t j = 150 c r g = 22 75 65 55 45 35 25 15 5 1.2 eoff eon v ce = 400 v v ge = 15 v i c = 15 a t j = 150 c 85 0.9 0.6 0.3 0
NGTG15N60S1EG http://onsemi.com 5 typical characteristics 575 525 475 425 375 325 275 225 175 1 10 100 1000 575 t f t r t d_off t d_on figure 13. switching time vs. r g figure 14. switching loss vs. v ce r g , gate resistor ( ) v ce , collector ? emitter voltage (v) figure 15. switching time vs. v ce figure 16. safe operating area v ce , collector ? emitter voltage (v) 525 475 425 375 325 275 225 175 1.2 switching time (ns) switching loss (mj) switching time (ns) v ge = 15 v i c = 15 a r g = 22 t j = 150 c eoff eon 75 65 55 45 35 25 15 5 1 10 100 1000 85 t f t r t d(off) t d(on) v ce = 400 v v ge = 15 v i c = 15 a t j = 150 c 0.9 0.6 0.3 0 v ge = 15 v i c = 15 a r g = 22 t j = 150 c v ce , collector ? emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.01 0.1 1 10 100 1000 single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 50 s 100 s 1 ms dc operation figure 17. reverse bias safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) v ge = 15 v, t c = 125 c 1000 100 10 1 0.01 0.1 1 10 100 1000
NGTG15N60S1EG http://onsemi.com 6 typical characteristics 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 18. igbt transient thermal impedance pulse time (sec) thermal response (z jc ) 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 1.06 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 7.1e ? 5 1.0e ? 4 0.002 0.003 0.00999 r i ( c/w) 0.1 0.5010 0.15051 0.33992 0.10550 0.03 0.20020 0.1 0.11423 figure 19. test circuit for switching characteristics
NGTG15N60S1EG http://onsemi.com 7 figure 20. definition of turn on waveform
NGTG15N60S1EG http://onsemi.com 8 figure 21. definition of turn off waveform
NGTG15N60S1EG http://onsemi.com 9 package dimensions to ? 220 case 221a ? 07 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 ? t ? seating plane s r j u t c style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtg15n60s1e/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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